A MODEL FOR THE DISCHARGE KINETICS AND PLASMA CHEMISTRY DURING PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON

被引：469
作者：
KUSHNER, MJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期
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D O I：
10.1063/1.340989
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：2532 / 2551
页数：20
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共 91 条
[1]   TEMPERATURE DEPENDENCES OF RATE COEFFICIENTS FOR REACTIONS OF AR+ WITH O2, H2, AND D2 [J].
ADAMS, NG ;
BOHME, DK ;
DUNKIN, DB ;
FEHSENFE.FC .
JOURNAL OF CHEMICAL PHYSICS, 1970, 52 (04) :1951-&
[2]  
ALLEN WN, 1977, J CHEM PHYS, V66, P3370
[3]   PRODUCT DISTRIBUTIONS IN THE REACTIONS OF EXCITED NOBLE-GAS ATOMS WITH HYDROGEN-CONTAINING COMPOUNDS [J].
BALAMUTA, J ;
GOLDE, MF ;
HO, YS .
JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (06) :2822-2830
[4]  
Biondi M. A., 1976, Principles of laser plasmas, P125
[5]   THERMAL ENERGY CHARGE-TRANSFER REACTIONS OF RARE-GAS IONS TO METHANE, ETHANE, PROPANE, AND SILANE - IMPORTANCE OF FRANCK-CONDON FACTORS [J].
BOWERS, MT ;
ELLEMAN, DD .
CHEMICAL PHYSICS LETTERS, 1972, 16 (03) :486-&
[6]  
Chan C F, 1983, LBID632 LAWR BERK LA
[7]  
CHANG JS, 1985, 8TH P INT C GAS DISC, P493
[8]   TOTAL AND PARTIAL ELECTRON COLLISIONAL IONIZATION CROSS-SECTIONS FOR CH4, C2H6, SIH4, AND SI2H6 [J].
CHATHAM, H ;
HILS, D ;
ROBERTSON, R ;
GALLAGHER, A .
JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (04) :1770-1777
[9]   REACTIONS OF HE+, NE+, AND AR+ WITH CH4, C2H6, SIH4, AND SI2H6 [J].
CHATHAM, H ;
HILS, D ;
ROBERTSON, R ;
GALLAGHER, AC .
JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (03) :1301-1311
[10]   ION CHEMISTRY IN SILANE DC DISCHARGES [J].
CHATHAM, H ;
GALLAGHER, A .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :159-169
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