LOW-TEMPERATURE ANNEALING OF AL-IMPLANTED SI-SIO2 STRUCTURES

被引：3

作者：

ABERG, AT ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,ELECTR RES LAB,S-40220 GOTHENBURG 5,SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：639 / 645

页数：7

共 16 条

[1] DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS [J].

BAKOWSKI, M ;

LUNDSTROM, KI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) :550-563

[2] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[3] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].

DEAL, BE ;

MACKENNA, EL ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&

[4] RADIATION HARDENING OF THERMAL OXIDES ON SILICON BY DISPLACEMENT DAMAGE [J].

DONOVAN, RP ;

SIMONS, M .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2897-+

[5] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J].

EERNISSE, EP ;

NORRIS, CB .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5196-5205

[6] GAMMA AND VACUUM ULTRAVIOLET IRRADIATIONS OF ION-IMPLANTED SIO2 FOR MOS DIELECTRICS [J].

EMMS, CG ;

HOLMESSIEDLE, AG ;

GROOMBRIDGE, I ;

BOSNELL, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :159-166

[7]

FAHRNER W, 1971, 2 P INT C ION IMPL S, P371

[8] ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS [J].

FRITZSCHE, CR ;

ROTHEMUND, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1243-+

[9] OXIDE CHARGE TRAPPING INDUCED BY ION-IMPLANTATION IN SIO2 [J].

HARARI, E ;

ROYCE, BSH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :288-292

[10] ELECTRON TRAPPING IN ALUMINUM-IMPLANTED SILICON DIOXIDE FILMS ON SILICON [J].

JOHNSON, NM ;

JOHNSON, WC ;

LAMPERT, MA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1216-1222

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