INFLUENCE OF DOPING ON THE ETCHING OF SI(111)

被引：90
作者：
WINTERS, HF
HAARER, D
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.36.6613
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：6613 / 6623
页数：11
相关论文
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