THE ENERGY-DEPENDENCE OF ATTENUATION LENGTHS IN ELEMENTS

被引：15

作者：

EBEL, H ^{[1
]}

EBEL, MF ^{[1
]}

BALDAUF, P ^{[1
]}

JABLONSKI, A ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS CHEM,WARSAW 42,POLAND

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 12卷 / 1-12期

关键词：

D O I：

10.1002/sia.740120226

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrons

引用

页码：172 / 173

页数：2

共 22 条

[1] RELATIVE INTENSITIES IN X-RAY PHOTO-ELECTRON SPECTRA .9. ESTIMATES FOR PHOTO-ELECTRON MEAN FREE PATHS TAKING INTO ACCOUNT ELASTIC COLLISIONS IN A SOLID [J].

BASCHENKO, OA ;

NEFEDOV, VI .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1982, 27 (02) :109-118

[2] RELATIVE INTENSITIES IN X-RAY PHOTOELECTRON-SPECTRA .7. THE EFFECT OF ELASTIC-SCATTERING IN A SOLID ON THE ANGULAR-DISTRIBUTION OF PHOTOELECTRONS ESCAPING FROM SAMPLES COVERED WITH THIN-FILMS OF VARIOUS THICKNESSES [J].

BASCHENKO, OA ;

NEFEDOV, VI .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 21 (02) :153-169

[3] RELATIVE INTENSITIES IN X-RAY PHOTOELECTRON-SPECTRA .4. EFFECT OF ELASTIC-SCATTERING IN A SOLID ON THE FREE-PATH OF ELECTRONS AND THEIR ANGULAR-DISTRIBUTION [J].

BASCHENKO, OA ;

NEFEDOV, VI .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 17 (06) :405-420

[4] ANGULAR-DEPENDENCE OF X-RAY PHOTOELECTRONS [J].

BRUNNER, J ;

ZOGG, H .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :911-920

[5] THE INELASTIC MEAN FREE PATHS OF AUGER ELECTRONS IN THIN-FILMS OF COPPER AND NICKEL [J].

BURKE, MA ;

SCHREURS, JJ .

SURFACE AND INTERFACE ANALYSIS, 1982, 4 (02) :42-46

[6] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[7] ELECTRON-ESCAPE DEPTHS IN GERMANIUM [J].

GANT, H ;

MONCH, W .

SURFACE SCIENCE, 1981, 105 (01) :217-224

[8]

Hedman J., 1972, PHYS SCRIPTA, V5, P93, DOI [10.1088/0031-8949/5/1-2/015, DOI 10.1088/0031-8949/5/1-2/015]

[9]

JABLONSKI A, IN PRESS SURF SCI

[10] ELECTRON ESCAPE DEPTH IN SILICON [J].

KLASSON, M ;

BERNDTSSON, A ;

HEDMAN, J ;

NILSSON, R ;

NYHOLM, R ;

NORDLING, C .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (06) :427-434

← 1 2 3 →