A 30-GHZ 1-W POWER HEMT

被引：12

作者：

HIKOSAKA, K

HIDAKA, N

HIRACHI, Y

ABE, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 11期

关键词：

D O I：

10.1109/EDL.1987.26715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：521 / 523

页数：3

共 7 条

[1]

GUPTA AK, 1985, JUN IEEE MICR MILL W, P50

[2] MICROWAVE-POWER DOUBLE-HETEROJUNCTION HEMTS [J].

HIKOSAKA, K ;

HIRACHI, Y ;

ABE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :583-589

[3] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR [J].

HIKOSAKA, K ;

HIRACHI, Y ;

MIMURA, T ;

ABE, M .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :341-343

[4]

HIKOSAKA K, 1983, SEP P NAT CONV DEP S

[5] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J].

SAUNIER, P ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :503-505

[6] POWER PERFORMANCE OF MICROWAVE HIGH-ELECTRON MOBILITY TRANSISTORS [J].

SMITH, PM ;

MISHRA, UK ;

CHAO, PC ;

PALMATEER, SC ;

HWANG, JCM .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :86-87

[7] 35-GHZ PERFORMANCE OF SINGLE AND QUADRUPLE POWER HETEROJUNCTION HEMTS [J].

SOVERO, E ;

GUPTA, AK ;

HIGGINS, JA ;

HILL, WA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1434-1438

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