共 50 条
- [1] Direct preparation of densified tungsten products of special shape and high purity from WF6 by using the CVD methodXiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 1994, 23 (06): : 74 - 77Li, HanguangPeng, Zhihui
- [2] SELECTIVE TUNGSTEN CVD IN A HOT WALLED REACTOR BY SILANE REDUCTION OF WF6JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) : 2765 - 2766GORCZYCA, TBDOUGLAS, LRGOROWITZ, BWILSON, RH
- [3] PREPARATION OF TUNGSTEN CARBIDE AND TUNGSTEN NITRIDE BY CVD METHOD USING FLUORIDENIPPON KAGAKU KAISHI, 1985, (10) : 1812 - 1820WATANABE, NTERADA, TCHONG, YBNAKAJIMA, T
- [4] TUNGSTEN FILM DEPOSITION BY HYDROGEN-ATOM REACTION WITH WF6JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 653 - 655LEE, WWREEVES, RRHALSTEAD, J
- [6] TUNGSTEN DEPOSITION ON GAAS USING WF6 AND ATOMIC-HYDROGENJOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1989 - 1992VANMAAREN, AJPSINKE, WC
- [7] LASER DIRECT WRITING OF TUNGSTEN FROM WF6THIN SOLID FILMS, 1992, 218 (1-2) : 137 - 143MEUNIER, MIZQUIERDO, RDESJARDINS, PTABBAL, MLECOURS, AYELON, A
- [8] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGENJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543BRYANT, WA
- [9] TUNGSTEN DEPOSITION ON QUARTZ BY THE REACTION OF WF6 AND HYDROGENJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) : 3163 - 3164KATO, EITSUMI, K
- [10] CVD TUNGSTEN FOR BURIED LAYER CONDUCTORS - DIFFUSION OF WF6 IN HIGH ASPECT RATIO POROUS SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C477 - C477BLEWER, RSTSAO, SSTRACY, MEGUTIERREZ, G