TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM GAAS SINGLE AND MULTIPLE QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引:207
作者
JIANG, DS [1 ]
JUNG, H [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1063/1.341862
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1371 / 1377
页数:7
相关论文
共 12 条
[1]   RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS [J].
BRUM, JA ;
BASTARD, G .
PHYSICAL REVIEW B, 1986, 33 (02) :1420-1423
[2]  
GOEBEL EO, 1983, PHYS REV LETT, V51, P1588
[3]   BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK .
SOLID STATE COMMUNICATIONS, 1983, 45 (09) :831-835
[4]   ULTRATHIN-LAYER (ALAS)M(GAAS)M SUPERLATTICES WITH M = 1,2,3 GROWN BY MOLECULAR-BEAM EPITAXY [J].
ISU, T ;
JIANG, DS ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01) :75-79
[5]   PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .2. INTRINSIC FREE-EXCITON NATURE OF QUANTUM WELL LUMINESCENCE [J].
JUNG, H ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02) :97-105
[6]   EXCITONS IN GAAS QUANTUM WELLS [J].
MILLER, RC ;
KLEINMAN, DA .
JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :520-540
[7]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[8]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].
STURGE, MD .
PHYSICAL REVIEW, 1962, 127 (03) :768-+
[9]   STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J].
THURMOND, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1133-1141