EPITAXIAL-GROWTH OF GERMANIUM ON SILICON BY CHEMICAL VAPOR-DEPOSITION

被引：0

作者：

GREEN, ML ^{[1
]}

ALI, YS ^{[1
]}

BRASEN, D ^{[1
]}

WILLENS, RH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：A28 / A28

页数：1

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