CRYSTAL-GROWTH AND DIFFUSION IN CU(IN, GA)SE2 CHALCOPYRITE THIN-FILMS

被引：43
作者：
WALTER, T
SCHOCK, HW
机构：
[1] Institut für Physikalische Elektronik, Universität Stuttgart, 7000 Stuttgart 80, Pfaffenwaldring 47, W
来源：
THIN SOLID FILMS | 1993年 / 224卷 / 01期
关键词：
D O I：
10.1016/0040-6090(93)90461-W
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this contribution aspects of the growth of polycrystalline Cu(In,Ga)Se, thin films for solar applications will be discussed. Epitaxial effects and interdiffusion of indium and gallium are closely correlated with the existence of copper selenide. These features play an important role in growing thin films with large crystallites. Bilayers and multilayers of CuInSe2 and CuGaSe2 were used to obtain insight into these complex mechanisms. A specific feature of these experiments is the use of gallium and indium as tracers.
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页码：74 / 81
页数：8
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