GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX

被引：43

作者：

ANTYPAS, GA

YEP, TO

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 08期

关键词：

D O I：

10.1063/1.1660707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3201 / &

共 15 条

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[2] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J].

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JAMES, LW .

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[4]

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ILEGEMS M, 1969, 1968 P S GAAS, P3

[7]

LONG D, 1966, PHYSICS 3 4 COMPOUND, V1, P143

[8] MASER ACTION IN INAS DIODES [J].

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[9]

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[10] PREPARATION OF HOMOGENEOUS AND REPRODUCIBLE SOLID SOLUTIONS OF GAP-GAAS [J].

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