SECONDARY ION MASS-SPECTROMETRY ANALYSIS OF BE DOPED GAAS ALGAAS HETEROSTRUCTURES

被引:0
|
作者
HOPKINS, LC
NAGLE, J
MALIK, RJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期
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D O I
10.1116/1.577921
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Secondary ion mass spectrometry (SIMS) has been used to study the depth profiles of beryllium (Be) incorporation and diffusion in GaAs/AlGaAs heterostructures of graded index separate confinement heterostructure quantum well lasers. The epilayers were grown by molecular-beam epitaxy with a thermally cracked AS2 source. The Ga-As quantum well was Be-doped with Be at 2 X 10(19) cm-3 using a substrate growth temperature of 580-degrees-C and the Al0.4Ga0.6As confinement layers were grown at 630-degrees-C. SIMS measurements show negligible diffusion of Be under these growth conditions. SIMS depth profiling was also used to resolve thin (2 nm) GaAs smoothing layers incorporated in Al0.4Ga0.6As confinement layers.
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页码:2843 / 2845
页数:3
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