MINORITY-CARRIER TRANSPORT IN CARBON DOPED GALLIUM-ARSENIDE

被引：15

作者：

COLOMB, CM

STOCKMAN, SA

VARADARAJAN, S

STILLMAN, GE

机构：

[1] Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Minority carrier electron mobilities and diffusion lengths in p-type C-doped GaAs have been measured at room temperature and 77 K using the zero field time of flight (ZFTOF) technique on p+-n structures with p+ carrier concentrations of 1.1 x 10(19), 6.0 X 10(18), 1.8 X 10(18) cm-3, which were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using CCl4 as the dopant. The electron mobilities obtained are higher than those reported for Be-doped MBE GaAs but lower than those reported for Ge-doped, LPE GaAs, while the diffusion lengths are similar to those found in similar concentration Be-doped samples.

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页码：65 / 67

页数：3

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