PROPERTIES OF RECOMBINATION CENTERS IN N-TYPE SILICON IRRADIATED WITH HIGH-ENERGY GAMMA-RAYS

被引：0
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作者：
LUGAKOV, PF
SHUSHA, VV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1012 / 1014
页数：3
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