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- [1] RECOMBINATION IN N-TYPE SILICON IRRADIATED WITH HIGH-ENERGY GAMMA-RAYSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1147 - 1148LUGAKOV, PFTKACHEV, VDSHUSHA, VV
- [2] RECOMBINATION IN n-TYPE SILICON IRRADIATED WITH HIGH-ENERGY GAMMA RAYS.1600, (11):Lugakov, P.F.Tkachev, V.D.Shusha, V.V.
- [3] INFLUENCE OF THE IMPURITY COMPOSITION ON THE FORMATION OF RECOMBINATION CENTERS DURING IRRADIATION OF N-TYPE SILICON WITH HIGH-ENERGY GAMMA-RAYSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 514 - 517LUGAKOV, PFTKACHEV, VDSHUSHA, VV
- [4] CHARGE CARRIER RECOMBINATION IN N-TYPE SILICON IRRADIATED WITH GAMMA-RAYSSOVIET PHYSICS-SOLID STATE, 1961, 3 (02): : 462 - 463GALKIN, GN
- [5] NATURE OF RECOMBINATION CENTERS IN P-TYPE SILICON IRRADIATED WITH GAMMA-RAYSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (06): : 692 - 693BERMAN, LSVORONKOV, VBKOZHUKH, MLKUSHASHVILI, KSTOLSTOBROV, MG
- [6] INFLUENCE OF THE IMPURITY COMPOSITION ON THE FORMATION OF RECOMBINATION CENTERS DURING IRRADIATION OF n-TYPE SILICON WITH HIGH-ENERGY gamma RAYS.Soviet physics. Semiconductors, 1979, 13 (05): : 514 - 517Lugakov, P.F.Tkachev, V.D.Shusha, V.V.
- [7] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE N-TYPE PBTE FILMS IRRADIATED WITH GAMMA-RAYSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 91 - 91ATAKULOV, SBKOKANBAEV, IM
- [8] RECOMBINATION STUDIES ON GAMMA-IRRADIATED N-TYPE SILICONJOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4638 - +CURTIS, OLSROUR, JRRAUCH, RB
- [9] NUMBER OF FRENKEL DEFECTS IN GERMANIUM IRRADIATED WITH HIGH-ENERGY GAMMA-RAYSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (04): : 446 - 447IVANOV, NAKOMAROV, SRKOSMACH, VFOSTROUMOV, VI
- [10] RECOMBINATION IN N-TYPE GERMANIUM IRRADIATED WITH CO-60 GAMMA-RAYS AND SUBJECTED TO AN ARBITRARY RATE OF EXCITATIONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 823 - 825TKACHEV, VDURENEV, VISHADURSKAYA, LIYAVID, VY