THE ONSET OF THE OXIDATION OF A CESIATED GAAS(100) SURFACE

被引：22

作者：

BESANCON, M

ARAGHIKOZAZ, H

LANDERS, R

JUPILLE, J

机构：

[1] Laboratoire Maurice Letort, CNRS associé à l'Université de Nancy, 54600 Villers-les-Nancy, 1, Rue de Vandoeuvre

来源：

SURFACE SCIENCE | 1990年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(90)90757-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of oxygen has been studied on a GaAs(100) surface precovered with a monolayer of cesium. Evidence is provided that the oxidation of the substrate only takes place after an induction period. The onset of the oxidation of GaAs is seen to coincide with the oxygen-induced minimum in the work function (at 9 × 10-5 Pa · s). As indicated by Auger LMM kinetic-energy shifts, gallium oxide is formed first, meanwhile the arsenic oxide appears above 3 × 10-4 Pa · s. © 1990.

引用

页码：23 / 28

页数：6

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