Effect of device parameters on transmission coefficient of Al0.2Ga0.8N/GaN Resonant Tunneling Diode grown on silicon substrate

AlGaN/GaN Resonant Tunneling Diodes (RTD) have increasingly become important, since these are ideally suited for high power, high frequency performance and capable of providing negative differential resistance at room temperature. Transmission coefficient (Tc) is an important factor to determine the negative differential resistance (NDR) and peak-to-valley ratio of RTD. An analytical model is developed here to predict the variation of Tc of AlGaN/GaN RTD structure with life time of carrier which is affected by different factors such as doping concentration, temperature and dislocation density in the film grown on substrate of different material. A comparative study of performance of RTD in terms of mobility of carrier in GaN grown on silicon substrate is also studied in this analysis.