SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP

被引：18

作者：

NAGAI, H

NOGUCHI, Y

机构：

来源：

关键词：

D O I：

10.1063/1.326109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1544 / 1545

页数：2

共 50 条

[1] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP
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[2] EFFECT OF HIGH DOPING ON THE PHOTO-LUMINESCENCE EDGE OF GAAS AND INP
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[3] FIELD-EFFECT OF INP PHOTO-LUMINESCENCE IN INP-ELECTROLYTE STRUCTURE
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[4] PHOTO-LUMINESCENCE AND LATTICE MISMATCH IN INGAAS/INP
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[9] PHOTO-LUMINESCENCE OF EPITAXIAL INP-YB FILMS
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[10] PHOTO-LUMINESCENCE DEAD LAYER IN P-TYPE INP
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