ENERGY-LEVEL AND PHOTOIONIZATION CROSS-SECTION OF GAP STATES IN A-SI-H

被引：5

作者：

OKUSHI, H

TANAKA, K

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90017-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：75 / 78

页数：4

共 9 条

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[7] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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[8] ENERGY-LEVELS OF DANGLING-BOND CENTERS IN A-SI-H STUDIED BY PHOTOCAPACITANCE TRANSIENT SPECTROSCOPY [J].

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