SURFACE EMITTING LEDS FOR 1.2-1.3 MU M WAVELENGTH WITH GAINASP-INP DOUBLE HETEROSTRUCTURES

被引：22

作者：

OE, K ^{[1
]}

ANDO, S ^{[1
]}

SUGIYAMA, K ^{[1
]}

机构：

[1] NTT,MUSASHINO ELECTR COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 09期

关键词：

D O I：

10.1143/JJAP.16.1693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1693 / 1694

页数：2

共 11 条

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[7] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE [J].

OE, K ;

ANDO, S ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) :1273-1274

[8] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004

[9] ZERO MATERIAL DISPERSION IN OPTICAL FIBERS [J].

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[10] EFFICIENT LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LEDS AT 1.1 MU-M FROM GA-XIN-1-XAS-YP-1-Y [J].

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MILLER, BI ;

CAPIK, RJ ;

BACHMANN, KJ .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :499-501

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