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- [34] SOME PROPERTIES OF TERNARY COMPOUND GAAS1-XPX DOPED WITH SELENIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 19 - &
- [37] ELECTRONIC-PROPERTIES OF IRON-DOPED GAAS1-XPX JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (28): : 5445 - 5455
- [38] ENHANCEMENT OF MINORITY-CARRIER LIFETIME IN GAAS1-XPX(X=0.4,0.65) BY NITROGEN IMPLANTATION APPLIED PHYSICS, 1981, 24 (01): : 1 - 5
- [39] SOME PROPERTIES OF TERNARY COMPOUND GAAS1-XPX DOPED WITH TELLURIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (01): : 56 - +