CHARACTERIZATION OF SURFACE RECOMBINATION VELOCITY AT SI SOLAR-CELL SURFACE UNDER HIGH INJECTION LEVEL

被引：2

作者：

UEMATSU, T ^{[1
]}

NAGATA, Y ^{[1
]}

OHTSUKA, H ^{[1
]}

WARABISAKO, T ^{[1
]}

NOMURA, H ^{[1
]}

SAITOH, T ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL,KOGANEI,TOKYO 184,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90037-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The illumination intensity dependence on the effective lifetimes of silicon wafers with SiO2 passivation layers is measured. A chopped CW-YAG laser light of up to 877 mW/cm(2) is used to accurately measure the effective lifetimes. Also, the density of interface traps of the corresponding wafers is measured, and the SRH model is used to analyze the obtained dependence of surface recombination velocity on excess carrier concentration. The fitting analysis shows that the hole capture cross-section strongly depends on the conduction type and preparation conditions. In contrast, the electron capture cross-section remains the same, regardless of the conduction type or sample preparation conditions.

引用

页码：169 / 175

页数：7

共 8 条

[1]

Aberle A. G., 1993, Progress in Photovoltaics: Research and Applications, V1, P133, DOI 10.1002/pip.4670010204

[2] IMPACT OF ILLUMINATION LEVEL AND OXIDE PARAMETERS ON SHOCKLEY-READ-HALL RECOMBINATION AT THE SI-SIO2 INTERFACE [J].