共 50 条
- [41] INVESTIGATION OF THE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON BY THE VIDICON METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (01): : 101 - 102
- [42] ABSORPTION IN THE DEFECTIVE REGION AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (03): : 256 - 258
- [43] SPECIFIC DISPLACEMENTS OF CARRIERS AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (07): : 751 - 753
- [44] TEMPERATURE-DEPENDENCE OF STEADY-STATE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 64 (06): : 675 - 688
- [45] CALCULATION OF ELECTRONIC POTENTIAL-ENERGY DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON HYDROGENATED AMORPHOUS-SILICON NITRIDE SUPERLATTICES PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (02): : 253 - 261
- [47] SLOW STRUCTURAL TRANSITIONS OF HYDROGEN IN HYDROGENATED AMORPHOUS-SILICON DURING LOW-TEMPERATURE ANNEALING PHYSICA B, 1991, 170 (1-4): : 277 - 280