REVERSIBLE PHOTOINDUCED CHANGES IN THE LOW-TEMPERATURE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON

被引：26
作者：
VANIER, PE
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期
关键词：
D O I：
10.1063/1.93365
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：986 / 988
页数：3
相关论文
共 23 条
[1]  
BIEGELSEN DK, 1980, SOL CELLS, V2, P421, DOI 10.1016/0379-6787(80)90018-6
[2]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[3]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
[4]   LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458
[5]   MODIFICATIONS IN OPTOELECTRONIC BEHAVIOR OF PLASMA-DEPOSITED AMORPHOUS-SEMICONDUCTOR ALLOYS VIA IMPURITY INCORPORATION [J].
GRIFFITH, RW ;
KAMPAS, FJ ;
VANIER, PE ;
HIRSCH, MD .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :391-396
[6]   OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP ;
SERGENT, AM .
APPLIED PHYSICS LETTERS, 1982, 40 (06) :474-476
[7]  
Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[8]   DEFECT CREATION BY OPTICAL-EXCITATION IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J].
MORIGAKI, K ;
SANO, Y ;
HIRABAYASHI, I .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (01) :147-152
[9]   NONGEMINATE RECOMBINATION OF ALPHA-SI-H [J].
MORT, J ;
CHEN, I ;
TROUP, A ;
MORGAN, M ;
KNIGHTS, J ;
LUJAN, R .
PHYSICAL REVIEW LETTERS, 1980, 45 (16) :1348-1351
[10]   LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].
PANKOVE, JI ;
BERKEYHEISER, JE .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706
123