MICRODISCHARGES OF AC-COUPLED SILICON STRIP SENSORS

被引:36
作者
OHSUGI, T
IWATA, Y
OHYAMA, H
OHMOTO, T
OKADA, M
YOSHIKAWA, M
TAMURA, N
HATAKENAKA, T
UNNO, Y
KOHRIKI, T
UJIIE, N
MIYATA, H
ASO, T
TAKASHIMA, R
MURAKAMI, A
KOBAYASHI, S
YAMAMOTO, K
YAMAMURA, K
MURAMATSU, M
机构
[1] OKAYAMA UNIV,DEPT PHYS,OKAYAMA 700,JAPAN
[2] KEK,NATL LAB HIGH ENERGY PHYS,TSUKUBA 305,JAPAN
[3] NIIGATA UNIV,DEPT PHYS,NIIGATA 95021,JAPAN
[4] KYOTO UNIV,KYOTO 612,JAPAN
[5] SAGA UNIV,DEPT PHYS,SAGA 840,JAPAN
[6] HAMAMATSU PHOTON CO,HAMAMATSU 435,JAPAN
关键词
D O I
10.1016/0168-9002(94)91405-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Microdischarge at the edges of strips in AC-coupled silicon strip sensors has been investigated. A steep increase in the leakage current (breakdown) and a sudden onset of burst noise were observed at a low reverse-bias voltage when the bias potential was across the AC-coupling capacitor. This can be explained by the occurrence of microdischarges along the edges of strips. These discharges have been confirmed by observing IR light emission. A calculation of the field strength at the strip edge suggests that a fringe field of the external electrode generates the microdischarge at the strip edge when the bias voltage is 50-80 V. This is consistent with our observations. We discuss a design for AC-coupled sensors that eliminates this discharge problem.
引用
收藏
页码:22 / 26
页数:5
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