EFFECT OF CHARGE ON BOND STRENGTH IN HYDROGENATED AMORPHOUS-SILICON

被引：15

作者：

CLARE, BW ^{[1
]}

TALUKDER, G ^{[1
]}

JENNINGS, PJ ^{[1
]}

CORNISH, JCL ^{[1
]}

HEFTER, GT ^{[1
]}

机构：

[1] MURDOCH UNIV,SCH MATH & PHYS SCI,MURDOCH,WA 6150,AUSTRALIA

来源：

JOURNAL OF COMPUTATIONAL CHEMISTRY | 1994年 / 15卷 / 06期

关键词：

D O I：

10.1002/jcc.540150608

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate that both positive and negative charges reduce the strength of Si-H and Si-Si bonds considerably, to the point where they may be broken easily by visible or even infrared light. (C) 1994 by John Wiley & Sons, Inc.

引用

页码：644 / 652

页数：9

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