ELECTRICAL-PROPERTIES OF NANOMETER-WIDTH REFRACTORY-METAL LINES FABRICATED BY FOCUSED ION-BEAM AND OXIDE RESISTS

Nanometer-width refractory metal lines are generated on Si substrates with high resolution by focused ion beam (FIB) exposure to MoO3 and WO3 inorganic resists, development and subsequent reduction in dry H-2 gas. On the basis of some experiments for optimizing the process parameters, the electrical properties of fabricated fine Mo and W lines are evaluated in terms of the sheet resistance and its temperature dependence. A 40-nm-wide line did not show any signs of electromigration after the electrical measurements at current densities of 10(5) A / CM2 for several tens of minutes.