GROWTH OF GRAIN-ORIENTED TUNGSTEN BRONZE SBN FILMS ON SI

This paper reports preliminary results on the growth of grain-oriented tungsten bronze Ce-doped Sr1-xBaxNb2O6 (SBN) thin films on (100)-oriented Si substrates. Grain orientation was maintained in these films up to 4-mu-m thickness using high oxygen pressure annealing up to 700-degrees-C. The films are smooth and have excellent surface quality. The temperature dependence of the dielectric constant indicates the phase transition is near 30-degrees-C, with a dielectric constant of 1400 at room temperature. The spontaneous polarization for these films is 1.3-mu-coul/cm2 at room temperature and 6.5-mu-coul/cm2 at -125-degrees-C.