SYSTEMATICS OF THE ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE

被引：0
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作者：
ANDERSON, CL [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C384 / C384
页数：1
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