CAVITY LENGTH AND DOPING DEPENDENCE OF 1.5-MU-M GAINAS/GAINASP MULTIPLE QUANTUM-WELL LASER CHARACTERISTICS

We have fabricated high-power 1.5-μm ridge-waveguide lasers with GaInAs/GaInAsP multiple quantum well active layers. For 1-mm long devices, we measured a threshold current of 35 mA and an output power of 62 mW per facet. The cavity length and doping dependence of threshold current, quantum efficiency, and resonant frequency have been investigated experimentally. With heavy Zn-doping in the barrier layers, we observe an increase in differential gain by a factor of 1.8. © 1990 IEEE