SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING

被引：67
作者：
TAMURA, M
TAMURA, H
TOKUYAMA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 01期
关键词：
D O I：
10.1143/JJAP.19.L23
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L23 / L26
页数：4
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