ATMOSPHERIC-PRESSURE, LOW-TEMPERATURE (LESS-THAN-500-DEGREES-C) UV/OZONE OXIDATION OF SILICON

被引：10

作者：

NAYAR, V

PATEL, P

BOYD, IW

机构：

[1] Department of Electronic and Electrical Engineering, University College London, London WCIE 7JE, Torrington Place

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Semiconductor devices and materials;

D O I：

10.1049/el:19900138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here a new and simple growth technology which is capable of producing ultra-thin oxides (≈40 Å) on silicon at temperatures below 500°C. Preliminary growth and electrical measurements are discussed. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：205 / 206

页数：2

共 9 条

[1] LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON IN N2O BY UV-IRRADIATION [J].

ISHIKAWA, Y ;

TAKAGI, Y ;

NAKAMICHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1453-L1455

[2]

Nayar V., 1989, Chemtronics, V4, P101

[3] LOW-TEMPERATURE OXIDATION OF CRYSTALLINE SILICON USING EXCIMER LASER IRRADIATION [J].

NAYAR, V ;

BOYD, IW ;

GOODALL, FN ;

ARTHUR, G .

APPLIED SURFACE SCIENCE, 1989, 36 (1-4) :134-140

[4]

NULMAN J, 1988, JUN P NATO ADV STUD

[5] PREOXIDATION UV TREATMENT OF SILICON-WAFERS [J].

RUZYLLO, J ;

DURANKO, GT ;

HOFF, AM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :2052-2055

[6] THIN THERMAL OXIDE ON SILICON [J].

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2460-2461

[7] LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J].

UCHIDA, Y ;

YUE, J ;

KAMASE, F ;

SUZUKI, T ;

HATTORI, T ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (11) :1633-1639

[8] XPS STUDY OF THE OXIDATION PROCESS OF SI(111) VIA PHOTOCHEMICAL DECOMPOSITION OF N2O BY AN UV EXCIMER LASER [J].

UNO, K ;

NAMIKI, A ;

ZAIMA, S ;

NAKAMURA, T ;

OHTAKE, N .

SURFACE SCIENCE, 1988, 193 (03) :321-335

[9] KINETICS OF THE SILICON DIOXIDE GROWTH-PROCESS IN AFTERGLOWS OF MICROWAVE-INDUCED PLASMAS [J].

VINCKIER, C ;

COECKELBERGHS, P ;

STEVENS, G ;

HEYNS, M ;

DEJAEGERE, S .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1450-1458

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