DEFECT REDUCTION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING DIFFERENT SUPERLATTICE STRUCTURES

被引：33

作者：

BEDAIR, SM

HUMPHREYS, TP

ELMASRY, NA

LO, Y

HAMAGUCHI, N

LAMP, CD

TUTTLE, AA

DREIFUS, DL

RUSSELL, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：942 / 944

页数：3

共 7 条

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[6] GENERATION AND PROPAGATION OF DEFECTS INTO MOLECULAR-BEAM EPITAXIALLY GROWN GAAS FROM AN UNDERLYING GAAS SUBSTRATE [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) :3449-3455

[7] DEFECT REDUCTION IN GAAS EPITAXIAL LAYERS USING A GAASP-INGAAS STRAINED-LAYER SUPERLATTICE [J].

TISCHLER, MA ;

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BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :294-296

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