INTERCONNECTIONS IN VLSI

被引：10

作者：

GHATE, PB

机构：

来源：

PHYSICS TODAY | 1986年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.881069

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：58 / 66

页数：9

共 15 条

[1]

Black J.R., 1982, 20TH P IEEE INT REL, P300

[2] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].

BLECH, IA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208

[3]

DHEURLE FM, 1978, PHYSICS THIN FILMS I, P243

[4] A 1-MU-M BIPOLAR VLSI TECHNOLOGY [J].

EVANS, SA ;

MORRIS, SA ;

ARLEDGE, LA ;

ENGLADE, JO ;

FULLER, CR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1373-1379

[5] LAYERED AND HOMOGENEOUS FILMS OF ALUMINUM AND ALUMINUM SILICON WITH TITANIUM AND TUNGSTEN FOR MULTILEVEL INTERCONNECTS [J].

GARDNER, DS ;

MICHALKA, TL ;

SARASWAT, KC ;

BARBEE, TW ;

MCVITTIE, JP ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :94-103

[6]

GHATE PB, 1982, 20TH ANN P INT REL P, P292

[7]

GHATE PB, 1986, AIP C P, V138, P321

[8]

GHATE PB, 1982, THIN SOLID FILMS, V45, P69

[9]

Kilby J., 1964, Miniaturized electronic circuits, Patent No. [3138743, US3138743]

[10]

Noyce R. N., 1961, Semiconductor device-and-lead structure, Patent No. [US2981877, 2981877]

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