SILICON/GERMANIUM QUANTUM STRUCTURES

被引：12
作者：
ABSTREITER, G
机构：
[1] Walter Schottky Institut, Technische Universität München, D-85748 Garching, Am Coulombwall
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 1-2期
关键词：
A HETEROJUNCTIONS; A QUANTUM WELLS; B EPITAXY; D ELECTRONIC TRANSPORT; D OPTICAL PROPERTIES;
D O I：
10.1016/0038-1098(94)90852-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The advances in fabrication of high quality Si/Ge heterostructures and superlattices are discussed with respect to their improved electrical and optical properties. Special emphasis is put on the study of high electron and hole mobilities in Si and Ge and on inter- and intraband optical properties.
引用
收藏
页码：5 / 10
页数：6
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