MICROWAVE OPERATION OF HIGH-POWER INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：1
|
作者：
MACK, MP [1 ]
BAYRAKTAROGLU, B [1 ]
KEHIAS, L [1 ]
BARRETTE, J [1 ]
NEIDHARD, R [1 ]
FITCH, R [1 ]
SCHERER, R [1 ]
DAVITO, D [1 ]
WEST, W [1 ]
机构：
[1] EPITRON CORP,PHOENIX,AZ 85027
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 12期
关键词：
TRANSISTORS; BIPOLAR DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19930713
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first high power demonstration of an InGaP/GaAs heterojunction bipolar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum Output power of 2.82 W CW was obtained for a 600 mum2 emitter area device (4.7 mW/mum2 power density) with an attendant gain of 6.92 dB; simultaneously, the device exhibited 55.2% power added efficiency, 69.1% collector efficiency and 8.0 x 10(4) A/cm2 emitter current density.
引用
收藏
页码：1068 / 1069
页数：2
相关论文
共 50 条
  • [1] SELF-ALIGNED INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION
    REN, F
    ABERNATHY, CR
    PEARTON, SJ
    LOTHIAN, JR
    WISK, PW
    FULLOWAN, TR
    CHEN, YK
    YANG, LW
    FU, ST
    BROZOVICH, RS
    LIN, HH
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (07) : 332 - 334
  • [2] FABRICATION OF SELF-ALIGNED GAAS/ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
    REN, F
    LOTHIAN, JR
    PEARTON, SJ
    ABERNATHY, CR
    WISK, PW
    FULLOWAN, TR
    TSENG, B
    CHU, SNG
    CHEN, YK
    YANG, LW
    FU, ST
    BROZOVICH, RS
    LIN, HH
    HENNING, CL
    HENRY, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (05): : 2916 - 2928
  • [3] VERY HIGH-POWER-DENSITY CW OPERATION OF GAAS/ALGAAS MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS
    BAYRAKTAROGLU, B
    BARRETTE, J
    KEHIAS, L
    HUANG, CI
    FITCH, R
    NEIDHARD, R
    SCHERER, R
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) : 493 - 495
  • [4] NOVEL FABRICATION OF SELF-ALIGNED GAAS/ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
    REN, F
    ABERNATHY, CR
    PEARTON, SJ
    YANG, LW
    FU, ST
    SOLID-STATE ELECTRONICS, 1995, 38 (09) : 1635 - 1639
  • [5] CARBON-DOPED INGAP/GAAS/INGAP DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS
    CHEN, YK
    KAPRE, R
    TSANG, WT
    WU, MC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2657 - 2657
  • [6] High-power microwave pulse induced failure on InGaP/GaAs heterojunction bipolar transistor
    Mao, Qidong
    Huang, Liyang
    Xiang, Zhongwu
    Zhu, Danni
    Meng, Jin
    MICROELECTRONICS RELIABILITY, 2022, 139
  • [7] HIGH-SPEED, LOW-NOISE INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    FRESINA, MT
    AHMARI, DA
    MARES, PJ
    HARTMANN, QJ
    FENG, M
    STILLMAN, GE
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) : 540 - 541
  • [8] THERMAL DESIGN STUDIES OF HIGH-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
    GAO, GB
    WANG, MZ
    GUI, X
    MORKOC, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) : 854 - 863
  • [9] Small InGaP/GaAs heterojunction bipolar transistors with high-speed operation
    Oka, T
    Ouchi, K
    Nakamura, T
    ELECTRONICS LETTERS, 1997, 33 (04) : 339 - 340
  • [10] HIGH-FREQUENCY POWER ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    CAMPS, T
    BAILBE, JP
    MARTY, A
    TASSELLI, J
    CAZARRE, A
    ELECTRONICS LETTERS, 1992, 28 (15) : 1444 - 1445
12345