NEW PRECURSOR FOR GROWING NITRIDE FILMS

被引：13

作者：

FLOWERS, MC

JONATHAN, NBH

LAURIE, AB

MORRIS, A

PARKER, GJ

机构：

[1] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

[2] UNIV SOUTHAMPTON,DEPT ELECTR & COMP SCI,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1992年 / 2卷 / 03期

关键词：

GALLIUM NITRIDE; HYDRAZOIC ACID; VERY-LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1039/jm9920200365

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reaction of hydrazoic acid, HN3, with trimethylgallium to produce thin-film gallium nitride under very-low-pressure chemical vapour deposition (VLPCVD) conditions is described. Data are presented which show that at 10(-6) mbar the product GaN is crystalline and strongly oriented on the substrate sapphire (0001) crystal face. Some potential advantages of using HN3 rather than the conventional precursor NH3, for nitride film production, are mentioned.

引用

页码：365 / 366

页数：2

共 11 条

[1]

DAVIS RF, 1990, NATO ADV SCI I E-APP, V185, P653

[2] CRYSTAL-GROWTH OF GALLIUM NITRIDE [J].