ELECTOREFLECTANCE STUDY OF ALXGA1-X-YINYP ALLOY

被引：24

作者：

ASAMI, K ^{[1
]}

ASAHI, H ^{[1
]}

GONDA, S ^{[1
]}

KAWAMURA, Y ^{[1
]}

TANAKA, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 70卷 / 01期

关键词：

D O I：

10.1016/0038-1098(89)90462-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：33 / 35

页数：3

共 18 条

[1]

ALIBERT C, 1972, PHYS REV B, V6, P13

[2]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J].

ASAHI, H ;

KAWAMURA, Y ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6958-6964

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].

ASAHI, H ;

KAWAMURA, Y ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931

[5] ELECTROREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF (ALXGA1-X)1-ZINZPYAS1-Y LATTICE MATCHED TO GAAS [J].

ASAMI, K ;

OKUNO, T ;

EMURA, S ;

GONDA, S ;

MUKAI, S .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1720-1722

[6] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[7] OPTICAL-PROPERTIES OF ALXIN1-XP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

BOUR, DP ;

SHEALY, JR ;

WICKS, GW ;

SCHAFF, WJ .

APPLIED PHYSICS LETTERS, 1987, 50 (10) :615-617

[8] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[9]

INOUE Y, 1987, JAPAN SOC APPLIED PH, V3, P814

[10] RAMAN-SCATTERING FROM ALGAINP [J].

KONDOW, M ;

MINAGAWA, S ;

SATOH, S .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2001-2003

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