EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS

被引:34
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CORDES, LF
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10.1063/1.1728222
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O59 [应用物理学];
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页码:383 / &
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[11]   PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].
SWANN, RCG ;
MEHTA, RR ;
CAUGE, TP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :713-&
[12]  
TAFT EA, PRIVATE COMMUNICATIO