EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS

被引：34

作者：

CORDES, LF

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 11卷 / 12期

关键词：

D O I：

10.1063/1.1728222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：383 / &

共 12 条

[1] SIMPLE MERCURY DROP ELECTRODE FOR MOS MEASUREMENTS [J].

ABOWITZ, G ;

ARNOLD, E .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (04) :564-&

[2] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].

BEAN, KE ;

GLEIM, PS ;

YEAKLEY, RL ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&

[3]

BROWN DJ, TO BE PUBLISHED

[4] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

CHU, TL ;

LEE, CH ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&

[5]

DOO VY, 1966, IEEE T ELECTRON DEVI, VED13, P561

[6]

HEUMANN FK, PRIVATE COMMUNICATIO

[7] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].

HU, SM ;

KERR, DR ;

GREGOR, LV .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&

[8] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

HU, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :693-+

[9]

PHILIPP HR, UNPUBLISHED RESULTS

[10] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J].

STERLING, HF ;

SWANN, RCG .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :653-&

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