FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE

被引：0

作者：

YEH, CF

LIN, SS

HONG, TY

机构：

[1] Department of Electronic Engineering, Institute of Electronics National Chiao-Tung University, Hsinchu

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

Science Council; Republic of China; under contract number;

D O I：

10.1016/0167-9317(95)00024-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature, high quality liquid-phase deposition (LPD) oxide was developed. The MOSFETs with such a new LPD oxide as gate insulators were investigated. The electrical characteristics, including threshold voltage of 2.1 Volts, peak effective mobility (mu(FE)) Of 580 cm(2)/V . s, and subthreshold swing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFETs. This demonstrates that LPD oxide can be an suitable candidate for future gate insulators in low-temperature processed MOSFETs.

引用

页码：101 / 104

页数：4

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