III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES

被引：61

作者：

LAW, HD

NAKANO, K

TOMASETTA, LR

机构：

[1] Rockwell International Science Center

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 07期

关键词：

D O I：

10.1109/JQE.1979.1070061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterostructure avalanche photodiodes have beesn successfully fabricated in several III-V alloy systems: GaAIAs/GaAs, GaAISbIGaSb, GaAIAsSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 m. Early stages of development show very encouraging results. High speed response of <35 ps and high quantum efficiency >95 percent have been obtained. The dark currents and the excess avalanche noise Wiu also be discussed. A direct comparison of GaAISb, GaAlAsSb, and InGaAsF'avalanchep hotodiodes is given. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：549 / 558

页数：10

共 52 条

[1]

ANDERSON SJ, 1977, I PHYS C 33B, P346

[2] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].