LINEWIDTH ENHANCEMENT FACTOR OF 1.3-MU M INGAASP INP STRAINED-LAYER MULTIPLE-QUANTUM-WELL DFB LASERS

被引：24

作者：

KANO, F

YOSHIKUNI, Y

FUKUDA, M

YOSHIDA, J

机构：

[1] NTT Optoelectronics Laboratories, Kanagawa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 10期

关键词：

D O I：

10.1109/68.93247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The linewidth enhancement factor alpha in a 1.3-mu-m InGaAsP/InP strained-layer multiple-quantum-well (SL-MQW) DFB laser has been evaluated from the relation between the frequency and intensity modulation indexes, and the spontaneous emission spectra below threshold current. It is demonstrated that the measured alpha-parameter of a 1.3-mu-m SL-MQW DFB laser is about 2 and is much smaller than that in a conventional bulk DFB laser. A low alpha-parameter means that low wavelength chirping characteristics are also obtained for the SL-MQW DFB laser.

引用

页码：877 / 879

页数：3

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