INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD

被引：27

作者：

HIRAO, T ^{[1
]}

SETSUNE, K ^{[1
]}

KITAGAWA, M ^{[1
]}

KAMADA, T ^{[1
]}

WASA, K ^{[1
]}

IZUMI, T ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期

关键词：

D O I：

10.1143/JJAP.26.2015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2015 / 2021

页数：7

共 4 条

[1] ROLE OF IONS AND RADICAL SPECIES IN SILICON-NITRIDE DEPOSITION BY ECR PLASMA CVD METHOD
HIRAO, T
SETSUNE, K
KITAGAWA, M
MANABE, Y
WASA, K
KOHIKI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L544 - L546
[2] MANABE Y, 1986, 18TH 1986 INT C SOL, P2414
[3] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA
MATSUO, S
KIUCHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L210 - L212
[4] Sun R. C., 1980, 18th Annual Proceedings of Reliability Physics, P244, DOI 10.1109/IRPS.1980.362948