ANTIPHASE BOUNDARIES IN EPITAXIALLY GROWN BETA-SIC

被引：103

作者：

PIROUZ, P ^{[1
]}

CHOREY, CM ^{[1
]}

POWELL, JA ^{[1
]}

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.97667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：221 / 223

页数：3

共 13 条

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[2]

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[9] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

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[10]

PIROUZ P, IZVESTIYA AKADEMII N

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