CYCLOTRON-RESONANCE LINEWIDTH IN SELECTIVELY DOPED GAAS-ALXGA1-XAS HETEROJUNCTIONS

被引:47
作者
VOISIN, P [1 ]
GULDNER, Y [1 ]
VIEREN, JP [1 ]
VOOS, M [1 ]
DELESCLUSE, P [1 ]
LINH, NT [1 ]
机构
[1] CSF,LAB CENT RECH THOMSON,F-91401 ORSAY,FRANCE
关键词
D O I
10.1063/1.92634
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:982 / 984
页数:3
相关论文
共 14 条
[1]  
ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[2]   THEORY OF QUANTUM TRANSPORT IN A 2-DIMENSIONAL ELECTRON-SYSTEM UNDER MAGNETIC-FIELDS .1. CHARACTERISTICS OF LEVEL BROADENING AND TRANSPORT UNDER STRONG FIELDS [J].
ANDO, T ;
UEMURA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) :959-967
[3]   THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM [J].
ANDO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) :989-997
[4]  
ANDO T, 1980, J PHYS SOC JPN, V48, P865
[5]  
BASTARD G, COMMUNICATION
[6]   TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].
DELESCLUSE, P ;
LAVIRON, M ;
CHAPLART, J ;
DELAGEBEAUDEUF, D ;
LINH, NT .
ELECTRONICS LETTERS, 1981, 17 (10) :342-344
[7]  
DINGLE R, 1978, APPL PHYS LETT, V33, P655
[8]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384
[9]   PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].
STERN, F ;
HOWARD, WE .
PHYSICAL REVIEW, 1967, 163 (03) :816-&
[10]   MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
DIMMOCK, JO .
SOLID STATE COMMUNICATIONS, 1969, 7 (13) :921-&