NEAR-INFRARED QUASI-ELASTIC LIGHT-SCATTERING SPECTROSCOPY OF ELECTRONIC EXCITATIONS IN III-V SEMICONDUCTORS

被引：0
|
作者：
BAIRAMOV, BH
IRMER, G
MONECKE, J
机构：
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
[2] BERGAKAD FREIBERG,FACHBEREICH PHYS,O-9200 FREIBERG,GERMANY
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results of the first observation of the concentration dependencies of integrated intensities and line shapes of quasi-elastic scattering from the free electron gas in III-V semiconductors in the concentration range from similar to 10(8) up to similar to 10(19) cm(-3) under a condition of non-resonant excitation by using the 1064 nm line of a cw Nd3+:YAG laser, when the observation of light scattering from energy- and momentum-density fluctuations is unambiguously demonstrated.
引用
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页码：767 / 772
页数：6
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