ULTRAFAST PHOTODETECTION WITH AN ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：12

作者：

CARRUTHERS, TF

FRANKEL, MY

KYONO, CS

机构：

[1] Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond visible-wavelength optical pulses were injected into unmodified AlInAs/GaInAs single-heterojunction bipolar transistors with current unity-gain frequencies of approximately 20 GHz. Emitter photocurrent transients as fast as 2.4 ps, corresponding to a photodetection bandwidth in excess of 200 GHz, were measured electro-optically. The responsivity was as high as 0.078 A/W at 620 nm. Slow photocurrent components due to photogenerated holes could be canceled with appropriate base biasing; measurements of the slow photocurrents provided information about the dynamics of carrier recombination in the base.

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页码：1921 / 1923

页数：3

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