ULTRAFAST PHOTODETECTION WITH AN ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：12
作者：
CARRUTHERS, TF
FRANKEL, MY
KYONO, CS
机构：
[1] Naval Research Laboratory, Washington
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期
关键词：
D O I：
10.1063/1.110649
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Femtosecond visible-wavelength optical pulses were injected into unmodified AlInAs/GaInAs single-heterojunction bipolar transistors with current unity-gain frequencies of approximately 20 GHz. Emitter photocurrent transients as fast as 2.4 ps, corresponding to a photodetection bandwidth in excess of 200 GHz, were measured electro-optically. The responsivity was as high as 0.078 A/W at 620 nm. Slow photocurrent components due to photogenerated holes could be canceled with appropriate base biasing; measurements of the slow photocurrents provided information about the dynamics of carrier recombination in the base.
引用
收藏
页码：1921 / 1923
页数：3
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