ELECTRON-TRANSPORT ACROSS THE ABRUPT GE-GAAS N-N HETEROJUNCTION

被引：8

作者：

BALLINGALL, JM ^{[1
]}

STALL, RA ^{[1
]}

WOOD, CEC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4098 / 4103

页数：6

共 19 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2]

[Anonymous], 1939, WISS VEROFF SIEMENS

[3]

Bethe H. A., 1942, 4312 MASS I TECHN RA

[4]

BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131

[5]

BROOKS H, 1955, ADV ELECTRONICS ELEC, V7, P156

[6] A STUDY OF THE CONDUCTION PROPERTIES OF A RECTIFYING NGAAS-N(GA,AL)AS HETEROJUNCTION [J].

CHANDRA, A ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :599-603

[7] CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS [J].

CHANG, LL .

SOLID-STATE ELECTRONICS, 1965, 8 (09) :721-&

[8] CHARACTERISTICS OF ISOTYPE N GE-N GAAS HETEROJUNCTIONS [J].

DEJAEGER, JC ;

SALMER, G .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (04) :207-211

[9] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J].

FANG, FF ;

HOWARD, WE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :612-&

[10] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].

FRENSLEY, WR ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815

← 1 2 →