EPITAXIAL-GROWTH OF BI(2201) PHASE IN ATOMIC LAYER-BY-LAYER DEPOSITION BY ION-BEAM SPUTTERING METHOD

被引：0

作者：

SAKAI, K

MIGITA, S

OTA, H

OTERA, H

AOKI, R

机构：

[1] Osaka Univ, Suita, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 1993年 / E76C卷 / 08期

关键词：

ION BEAM SPUTTERING; BSCCO (2201); OZONE; ULTRAVIOLET LIGHT; SUPERCONDUCTOR; BUFFER LAYER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bi2Sr2CuOx (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0x10(-5) Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi (220 1) oriented along the c-axis is grown.

引用

页码：1246 / 1250

页数：5

共 8 条

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